Max. Peak Reverse Voltage(VRM) Max. Reverse Recovery Time(trr) Power Dissipation(PTOT) Forward Voltage Drop(VF @ IF)V Forward Voltage Drop(VF @ IF)mA Max. Reverse Leakage Current(IR @ VR)A Max. Reverse Leakage Current(IR @ VR)V Max. Capacitance(CT @ 0V) Package 100 3000 250 0.9 1 0.005 75 2 SOT-23
BAV170 |
RFQ for BAV170 |
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| Technical/Catalog Information | BAV170 |
| Vendor | Diodes Inc (VA) |
| Category | Discrete Semiconductor Products |
| Diode Type | Standard |
| Diode Configuration | 1 Pair Common Cathode |
| Voltage - DC Reverse (Vr) (Max) | 85V |
| Current - Average Rectified (Io) (per Diode) | 125mA (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 50mA |
| Current - Reverse Leakage @ Vr | 5nA @ 75V |
| Reverse Recovery Time (trr) | 3s |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-3, TO-236-3, Micro3?, SSD3, SST3 |
| Packaging | Cut Tape (CT) |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | BAV170 BAV170 BAV170DICT ND BAV170DICTND BAV170DICT |
| Product | Manufacturers | Pack | D/C | |||||||||
| BAV170 | - | - | 2007 |
Features |
| • Low-leakage applications• Medium speed switching times |
| Parameter |
Symbol |
Value |
Unit |
| Diode reverse voltage |
VR |
80 |
V |
| Peak reverse voltage |
VRM |
85 | |
| Forward current |
IF |
200 |
mA |
| Non-repetitive peak surge forward current t = 1 s t = 1 s |
IFSM |
4.5 0.5 |
A |
| Total power dissipation TS 35 |
Ptot |
250 |
mW |
| Junction temperature |
Tj |
150 |
|
| Storage temperature |
Tstg |
-65 ... 150 |